一种新的GaAs PHEMT器件可靠性评估方法研究

A new method to evaluate reliability in GaAs PHEMT's

摘　要：通过研究应力前后GaAs PHEMT器件电特性的测量,分析了GaAs PHEMT退化的原因,从实验中得出高场下碰撞电离的电离率与器件沟道电场峰值的关系曲线.对高场下碰撞电离率的实验曲线进行拟合,可以得到碰撞电离率与器件沟道电场峰值的量化关系,由此可以对GaAs PHEMT器件的电性能和可靠性进行改善和评估.进一步改进GaAs PHEMT的击穿电压,将需要严格控制沟道中的碰撞电离.
关键词：高电子迁移率晶体管, 碰撞电离率, 可靠性评估
分类号：TN3　文献标识码：A
文章编号：1000-3290/2003/52(10)/2576-04

参考文献：

［1］Gaddi R, Menozzi R, Dieci D, Lanzieri C, Meneghesso G, Canali C and Zanoni E 1999 IEEE 37th Annual International Reliability Physics Symposium 110
［2］Bollaert S, Cordier Y, Happy H, Zaknoune M, Hoel V, Lepilliet S and Cappy A 1998 IEDM 235
［3］Fernandez T, Garcia J A, Tazon A, Mediavilla A, Pedro J C and Garcia J L, 1999 IEEE Electron Device Letters 20 557
［4］Xu D, Suemitsu T, Osaka J, Umeda Y, Yamane Y, Ishii Y, Ishii T and Tamamura T 1999 IEEE Electron Device Letters 20 206
［5］Zhong Y G, Shen B, Liu J et al 2001 Acta Phys. Sin. 50 1774[周玉刚、沈波、刘杰等 2001 物理学报 50 1774]
［6］Whelan C S, Hoke W E, Mctaggart R A, Lardizabal S M, Lyman P S, Marsh P F and Kazior T E 2000 IEEE Electron Device Letters 21 5
［7］Binari S T, Ikossi K and Roussos J A et al 2002 IEEE Trans. Electron Devices 48 465
［8］Bradley S T, Young A P and Brillson L J et al 2001 IEEE Trans. Electron Devices 48 412
［9］Smorchkova I P, Elsass C R and Ibbetson J P et al.1999 J. Appl. Phys. 86 4520
［10］Liu H X, Hao Y, Zhang T, Zheng X F and Ma X H 2003 Acta Phys. Sin. 52 1774[刘红侠、郝跃、张涛、郑雪峰、马晓华 2003 物理学报 52 1774]
［11］Hu C 1985 IEEE Trans. Electron Devices 32 375